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| MBRM110L Surface Mount Schottky Power Rectifier POWERMITE(R) Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters, reverse battery protection, and "Oring" of multiple supply voltages and any other application where performance and size are critical. Features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 10 VOLTS CATHODE POWERMITE CASE 457 PLASTIC ANODE * * * * * * * * * * * Ultra Low VF 1st in Marketplace with a 10 VR Schottky Rectifier Low Profile - Maximum Height of 1.1 mm Small Footprint - Footprint Area of 8.45 mm2 Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Protection: Human Body Model >4000 V (Class 3) ESD Protection: Machine Model >400 V (Class C) Powermite is JEDEC Registered as D0-216AA Case: Molded Epoxy Epoxy Meets UL 94V-O at 1/8 Weight: 62 mg (approximately) Lead and Mounting Surface Temperature for Soldering Purposes. 260C Maximum for 10 Seconds MARKING DIAGRAM M 1L1 Mechanical Characteristics: 1L1 = Device Code M = Date Code ORDERING INFORMATION Device Package Shipping 3,000/Tape & Reel MAXIMUM RATINGS Please See the Table on the Following Page MBRM110LT1 POWERMITE MBRM110LT3 POWERMITE 12,000/Tape & Reel (c) Semiconductor Components Industries, LLC, 2001 1 October, 2001 - Rev. 0 Publication Order Number: MBRM110L/D MBRM110L MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 115C, RqJL = 35C/W) Non-Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFSM Tstg TJ dv/dt Value 10 Unit V 1.0 50 -55 to 125 -55 to 125 10,000 A A C C V/ms THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Lead (Anode) (Note 1) Thermal Resistance - Junction-to-Tab (Cathode) (Note 1) Thermal Resistance - Junction-to-Ambient (Note 1) Rtjl Rtjtab Rtja 35 23 277 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 2) (VR = 5.0 V) (VR = 10 V) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. IR VF TJ = 25C 0.280 0.365 0.415 TJ = 25C 0.2 0.5 TJ = 100C 0.175 0.275 0.325 TJ = 100C 30 60 mA V http://onsemi.com 2 MBRM110L IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125C 100C 75C 1 25C 10 TJ = 125C 100C 75C 1 -55C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.1 0.2 25C 0.3 -55C 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage 1E-1 TJ = 125C 1E-2 100C 1E-3 75C 1E+0 TJ = 125C 1E-1 100C 1E-2 75C 1E-4 25C 1E-5 1E-6 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) 1E-3 25C 1E-4 1E-5 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 MBRM110L IF , AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (C) SQUARE WAVE dc Figure 5. Current Derating - Junction to Lead PFO, AVERAGE POWER DISSIPATION (WATTS) 500 450 C, CAPACITANCE (pF) 400 350 300 250 200 150 100 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) TJ = 25C f = 1 MHz 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IO, AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE dc Figure 6. Typical Capacitance Figure 7. Forward Power Dissipation http://onsemi.com 4 MBRM110L R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) 0.001 0.00001 0.0001 0.001 0.01 T, TIME (s) 0.1 1.0 10 100 Figure 8. Thermal Response Junction to Lead R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 T, TIME (s) 1.0 10 100 1,000 Figure 9. Thermal Response Junction to Ambient 0.025 0.635 0.030 0.762 0.105 2.67 0.100 2.54 inches mm Minimum Recommended Footprint 0.050 1.27 http://onsemi.com 5 MBRM110L PACKAGE DIMENSIONS POWERMITE PLASTIC PACKAGE CASE 457-04 ISSUE D -A- C J S F 0.08 (0.003) M TB S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF TERM. 1 -B- K TERM. 2 R L J H -T- 0.08 (0.003) M D TB S C S http://onsemi.com 6 MBRM110L Notes http://onsemi.com 7 MBRM110L POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 MBRM110L/D |
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